Brand: Samsung Model: M425R1GB4PB0-CWM Capacity: 8 GB Type: DDR5 SO-DIMM Speed: 5600 MT/s (DDR5-5600 / PC5-44800) Form Factor: 262-pin SO-DIMM (laptop memory) Voltage: 1.1 V ECC: Non-ECC Rank: 1Rx16 (single rank) CAS Latency: CL46Brand: Samsung Model: M425R1GB4PB0-CWM Capacity: 8 GB Type: DDR5 SO-DIMM Speed: 5600 MT/s (DDR5-5600 / PC5-44800) Form Factor: 262-pin SO-DIMM (laptop memory) Voltage: 1.1 V ECC: Non-ECC Rank: 1Rx16 (single rank) CAS Latency: CL46
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Popis
Brand: Samsung
Model: M425R1GB4PB0-CWM
Capacity: 8 GB
Type: DDR5 SO-DIMM
Speed: 5600 MT/s (DDR5-5600 / PC5-44800)
Form Factor: 262-pin SO-DIMM (laptop memory)
Voltage: 1.1 V
ECC: Non-ECC
Rank: 1Rx16 (single rank)
CAS Latency: CL46Brand: Samsung
Model: M425R1GB4PB0-CWM
Capacity: 8 GB
Type: DDR5 SO-DIMM
Speed: 5600 MT/s (DDR5-5600 / PC5-44800)
Form Factor: 262-pin SO-DIMM (laptop memory)
Voltage: 1.1 V
ECC: Non-ECC
Rank: 1Rx16 (single rank)
CAS Latency: CL46
Model: M425R1GB4PB0-CWM
Capacity: 8 GB
Type: DDR5 SO-DIMM
Speed: 5600 MT/s (DDR5-5600 / PC5-44800)
Form Factor: 262-pin SO-DIMM (laptop memory)
Voltage: 1.1 V
ECC: Non-ECC
Rank: 1Rx16 (single rank)
CAS Latency: CL46Brand: Samsung
Model: M425R1GB4PB0-CWM
Capacity: 8 GB
Type: DDR5 SO-DIMM
Speed: 5600 MT/s (DDR5-5600 / PC5-44800)
Form Factor: 262-pin SO-DIMM (laptop memory)
Voltage: 1.1 V
ECC: Non-ECC
Rank: 1Rx16 (single rank)
CAS Latency: CL46
Parametry
| Rozdělení dle typu | DDR5 |
| Kapacita | 8 GB |
| Výrobce | Samsung |
| Napětí | 1.1 V |
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